TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL

Title:	TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
Authors:	HUANG, CM WANG, TH 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-Feb-1995
Abstract:	A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 mu m. The importance of the two injection mechanisms, thermionic emission and quantum tunneling, is evaluated.
URI:	http://dx.doi.org/10.1016/0038-1101(94)00087-V http://hdl.handle.net/11536/2083
ISSN:	0038-1101
DOI:	10.1016/0038-1101(94)00087-V
Journal:	SOLID-STATE ELECTRONICS
Volume:	38
Issue:	2
Begin Page:	461
End Page:	464
Appears in Collections:	Articles

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