標題: Demonstration and Electrical Performance Investigation of Wafer-Level Cu Oxide Hybrid Bonding Schemes
作者: Chen, Kuan-Neng
Xu, Zheng
Lu, Jian-Qiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hybrid wafer bonding;wafer level;3-D integration
公開日期: 1-Aug-2011
摘要: Wafer-level Cu oxide hybrid bonding owns a number of merits, including simultaneous formations of electrical and mechanical bonds, underfill free, high alignment accuracy, increasing bond strength, and excellent reliability performance in 3-D integration. This letter demonstrates the fabrication of wafer-level Cu oxide hybrid bonding. Investigations of experimental and electrical simulation data of Cu oxide hybrid bonding structures are reported. Their alignment accuracy, frequency responses, and passive elements are compared for 3-D integration applications.
URI: http://dx.doi.org/10.1109/LED.2011.2157657
http://hdl.handle.net/11536/20882
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2157657
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 8
起始頁: 1119
結束頁: 1121
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