標題: Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
作者: Wu, Ming-Chi
Lin, Meng-Han
Yeh, Yu-Ting
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: In this study, we investigated the resistive switching characteristics of the SrZrO3 (SZO)-based resistance random access memory (RRAM). After the sequential thin-films Pt/Ti/SZO/LaNiO3 deposition, the post annealing (PA) treatment under various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. It can be proved that the Ti modulation layer act as an oxygen getter can modify the resistive switching property of RRAM. With the suitable thickness of Ti layer and the proper annealing temperature, the SZO-based RRAM device could have a lower operation voltage, a lower compliance current a long retention behavior, and stable resistance ratio over 10(4) s under 0.3 V reading voltage.
URI: http://hdl.handle.net/11536/20990
http://dx.doi.org/10.1149/1.3372595
ISBN: 978-1-60768-142-7
ISSN: 1938-5862
DOI: 10.1149/1.3372595
期刊: DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING
Volume: 28
Issue: 2
起始頁: 411
結束頁: 420
Appears in Collections:Conferences Paper


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