Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface

Title:	Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface
Authors:	Lin, B-W. Hsu, W-C. Wu, Y. S. 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2010
Abstract:	The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.
URI:	http://hdl.handle.net/11536/20996 http://dx.doi.org/10.1149/1.3485608
ISBN:	978-1-56677-832-9
ISSN:	1938-5862
DOI:	10.1149/1.3485608
Journal:	STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52)
Volume:	33
Issue:	13
Begin Page:	67
End Page:	69
Appears in Collections:	Conferences Paper

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