標題: | Fabrication of IGZO Sputtering Target and Its Applications to the Preparation of Thin-film Transistor (TFT) Devices |
作者: | Lo, Chun-Chieh Hsieh, Tsung-Eong 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2010 |
摘要: | A hybrid of chemical dispersion and mechanical grinding process was developed to fabricate the mixture of nano-scale In2O3, Ga2O3 and ZnO oxide powders at the atomic ratio 1:1:2. As revealed by x-ray diffraction (XRD) analysis, sputtering target containing sole IGZO(4) phase could be obtained by sintering the oxide mixture pressed in disc form at temperatures >= 1300 degrees C for 6 hrs. The IGZO target was then transferred to a sputtering system and the thin-film transistors (TFTs) containing amorphous IGZO channels were fabricated. Post-annealing at 300 degrees C for 1 hr in air ambient was performed in order to improve the device performance. Electrical measurements indicated that the TFT samples with saturation mobility (mu(sat)) = 14.7 cm(2)/V.s, threshold voltage (V-TH) = 0.57 V, subthreshold swing (S.S.) = 0.45 V/decade and on/off ratio = 10(8) could be achieved. |
URI: | http://hdl.handle.net/11536/20998 http://dx.doi.org/10.1149/13377109 |
ISBN: | 978-1-60768-144-1 |
ISSN: | 1938-5862 |
DOI: | 10.1149/13377109 |
期刊: | WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 11 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52) |
Volume: | 28 |
Issue: | 4 |
起始頁: | 131 |
結束頁: | 135 |
顯示於類別: | 會議論文 |