標題: Fabrication of IGZO Sputtering Target and Its Applications to the Preparation of Thin-film Transistor (TFT) Devices
作者: Lo, Chun-Chieh
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A hybrid of chemical dispersion and mechanical grinding process was developed to fabricate the mixture of nano-scale In2O3, Ga2O3 and ZnO oxide powders at the atomic ratio 1:1:2. As revealed by x-ray diffraction (XRD) analysis, sputtering target containing sole IGZO(4) phase could be obtained by sintering the oxide mixture pressed in disc form at temperatures >= 1300 degrees C for 6 hrs. The IGZO target was then transferred to a sputtering system and the thin-film transistors (TFTs) containing amorphous IGZO channels were fabricated. Post-annealing at 300 degrees C for 1 hr in air ambient was performed in order to improve the device performance. Electrical measurements indicated that the TFT samples with saturation mobility (mu(sat)) = 14.7 cm(2)/V.s, threshold voltage (V-TH) = 0.57 V, subthreshold swing (S.S.) = 0.45 V/decade and on/off ratio = 10(8) could be achieved.
URI: http://hdl.handle.net/11536/20998
http://dx.doi.org/10.1149/13377109
ISBN: 978-1-60768-144-1
ISSN: 1938-5862
DOI: 10.1149/13377109
期刊: WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 11 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52)
Volume: 28
Issue: 4
起始頁: 131
結束頁: 135
Appears in Collections:Conferences Paper


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