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dc.contributor.authorLiu, Tao-Chien_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorHuang, Yi-Saen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorTu, King-Ningen_US
dc.date.accessioned2014-12-08T15:29:09Z-
dc.date.available2014-12-08T15:29:09Z-
dc.date.issued2013-03-01en_US
dc.identifier.issn1359-6462en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.scriptamat.2012.10.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/21014-
dc.description.abstractElectroplating was used to fabricate a high density of nanotwins that exhibited the preferred (111) orientation in Cu. We found no formation of Kirkendall voids in solder reactions on the nanotwinned Cu. This was due to the high density of steps and kinks on the nanotwin boundaries, which serve as vacancy sinks. Thus the vacancy concentration cannot reach supersaturation and nucleate voids. The finding is a significant advance in the problem of solder joint reliability in microelectronic three-dimensional integrated circuit devices. (c) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectKirkendall voidsen_US
dc.subjectTwinningen_US
dc.subjectCopperen_US
dc.subjectNanostructured materialsen_US
dc.subjectDiffusionen_US
dc.titleEliminate Kirkendall voids in solder reactions on nanotwinned copperen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.scriptamat.2012.10.024en_US
dc.identifier.journalSCRIPTA MATERIALIAen_US
dc.citation.volume68en_US
dc.citation.issue5en_US
dc.citation.spage241en_US
dc.citation.epage244en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000314012000005-
dc.citation.woscount8-
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