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dc.contributor.authorDo, Hienen_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorVan-Truong Daien_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:29:34Z-
dc.date.available2014-12-08T15:29:34Z-
dc.date.issued2013-01-15en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2012.11.008en_US
dc.identifier.urihttp://hdl.handle.net/11536/21264-
dc.description.abstractHigh-quality epitaxial TiNxOy, films with different oxygen content were deposited on MgO(001) substrates by pulsed laser deposition method. The chemical composition of the deposited films was determined by X-ray photoelectron spectroscopy. X-ray diffraction results showed that the TiNxOy films are heteroepitaxially grown on MgO with good crystallinity and their lattice parameters decrease with increased oxygen concentration. Transmission electron microscopy analyses showed that TiNxOy films contain a low density of dislocations. Atomic force microscopy revealed very smooth surfaces of TiNxOy films with roughness of 026-0.29 nm. The resistivity of TiNxOy, films determined by Hall measurement was about 28-33 mu Omega cm. Nanoindentation measurements showed the film hardness and Young's modulus of about 23-26 GPa and 400-430 GPa, respectively. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTitanium oxynitrideen_US
dc.subjectEpitaxial growthen_US
dc.subjectPulsed laser depositionen_US
dc.subjectNanoindentationen_US
dc.titleStructure and property of epitaxial titanium oxynitride grown on MgO(001) substrate by pulsed laser depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2012.11.008en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume214en_US
dc.citation.issueen_US
dc.citation.spage91en_US
dc.citation.epage96en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315004000013-
dc.citation.woscount3-
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