Structure and property of epitaxial titanium oxynitride grown on MgO(001) substrate by pulsed laser deposition

doi:10.1016/j.surfcoat.2012.11.008

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DC 欄位	值	語言
dc.contributor.author	Do, Hien	en_US
dc.contributor.author	Wu, Yue-Han	en_US
dc.contributor.author	Van-Truong Dai	en_US
dc.contributor.author	Peng, Chun-Yen	en_US
dc.contributor.author	Yen, Tzu-Chun	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2014-12-08T15:29:34Z	-
dc.date.available	2014-12-08T15:29:34Z	-
dc.date.issued	2013-01-15	en_US
dc.identifier.issn	0257-8972	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.surfcoat.2012.11.008	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21264	-
dc.description.abstract	High-quality epitaxial TiNxOy, films with different oxygen content were deposited on MgO(001) substrates by pulsed laser deposition method. The chemical composition of the deposited films was determined by X-ray photoelectron spectroscopy. X-ray diffraction results showed that the TiNxOy films are heteroepitaxially grown on MgO with good crystallinity and their lattice parameters decrease with increased oxygen concentration. Transmission electron microscopy analyses showed that TiNxOy films contain a low density of dislocations. Atomic force microscopy revealed very smooth surfaces of TiNxOy films with roughness of 026-0.29 nm. The resistivity of TiNxOy, films determined by Hall measurement was about 28-33 mu Omega cm. Nanoindentation measurements showed the film hardness and Young's modulus of about 23-26 GPa and 400-430 GPa, respectively. (C) 2012 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Titanium oxynitride	en_US
dc.subject	Epitaxial growth	en_US
dc.subject	Pulsed laser deposition	en_US
dc.subject	Nanoindentation	en_US
dc.title	Structure and property of epitaxial titanium oxynitride grown on MgO(001) substrate by pulsed laser deposition	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.surfcoat.2012.11.008	en_US
dc.identifier.journal	SURFACE & COATINGS TECHNOLOGY	en_US
dc.citation.volume	214	en_US
dc.citation.issue		en_US
dc.citation.spage	91	en_US
dc.citation.epage	96	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000315004000013	-
dc.citation.woscount	3	-
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