完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, Szu-Lingen_US
dc.contributor.authorWu, Meng-Hsiuen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:29:40Z-
dc.date.available2014-12-08T15:29:40Z-
dc.date.issued2012-12-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2012.2227465en_US
dc.identifier.urihttp://hdl.handle.net/11536/21301-
dc.description.abstractA single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 mu m CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P(1 dB)s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.en_US
dc.language.isoen_USen_US
dc.subjectBVdssen_US
dc.subjectinsertion lossen_US
dc.subjectisolationen_US
dc.subjectpower-handling capabilityen_US
dc.titleDesign of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2012.2227465en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue12en_US
dc.citation.spage645en_US
dc.citation.epage647en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315652300012-
dc.citation.woscount2-
顯示於類別:期刊論文


文件中的檔案:

  1. 000315652300012.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。