Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors

doi:10.1109/LMWC.2012.2227465

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Szu-Ling	en_US
dc.contributor.author	Wu, Meng-Hsiu	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:29:40Z	-
dc.date.available	2014-12-08T15:29:40Z	-
dc.date.issued	2012-12-01	en_US
dc.identifier.issn	1531-1309	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LMWC.2012.2227465	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21301	-
dc.description.abstract	A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 mu m CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P(1 dB)s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.	en_US
dc.language.iso	en_US	en_US
dc.subject	BVdss	en_US
dc.subject	insertion loss	en_US
dc.subject	isolation	en_US
dc.subject	power-handling capability	en_US
dc.title	Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LMWC.2012.2227465	en_US
dc.identifier.journal	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	12	en_US
dc.citation.spage	645	en_US
dc.citation.epage	647	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000315652300012	-
dc.citation.woscount	2	-
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