標題: Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
作者: Fan, Ming-Long
Hu, Vita Pi-Ho
Chen, Yin-Nien
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-2012
摘要: This paper investigates the impact of intrinsic random variability on the robustness of sense amplifier (SA) for fin-shaped field-effect transistor (FinFET) subthreshold static random access memory (SRAM) applications. We employ a model-assisted statistical approach to consider both fin line edge roughness (fin LER) and work function variation, which are regarded as the major variation sources in an advanced FinFET device. Our results indicate that fin LER dominates the overall variability of subthreshold SA robustness and sensing margin. In addition, it is observed that the offset voltage (V-OS) of current latch SA calculated solely from threshold voltage (V-T) mismatch underestimates the actual variation and is shown to be optimistic. For large-signal single-ended inverter sensing, we find that sense "0" hinders the allowable sensing margin and needs to be carefully designed. Compared with bulk CMOS, the superior electrostatic integrity and variability of FinFET enhance the feasibility of differential sensing in subthreshold SRAM applications.
URI: http://dx.doi.org/10.1109/TCSII.2012.2231016
http://hdl.handle.net/11536/21304
ISSN: 1549-7747
DOI: 10.1109/TCSII.2012.2231016
期刊: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume: 59
Issue: 12
起始頁: 878
結束頁: 882
顯示於類別:期刊論文