Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering

doi:10.1149/1.3481233

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Bau-Ming	en_US
dc.contributor.author	Yang, Tzu-Ming	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Su, Chun-Jung	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.date.accessioned	2014-12-08T15:29:42Z	-
dc.date.available	2014-12-08T15:29:42Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-174-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21335	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3481233	en_US
dc.description.abstract	Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped alpha-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.	en_US
dc.language.iso	en_US	en_US
dc.title	Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3481233	en_US
dc.identifier.journal	THIN FILM TRANSISTORS 10 (TFT 10)	en_US
dc.citation.volume	33	en_US
dc.citation.issue	5	en_US
dc.citation.spage	169	en_US
dc.citation.epage	172	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000315444100020	-
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