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dc.contributor.authorChang, K. M.en_US
dc.contributor.authorHuang, S. S.en_US
dc.contributor.authorCheng, C. H.en_US
dc.date.accessioned2014-12-08T15:29:43Z-
dc.date.available2014-12-08T15:29:43Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-60768-174-8en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/21337-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3481245en_US
dc.description.abstractLow temperature processes and high quality gate insulator are very important for organic thin film transistors (OTFTs). We utilized atmospheric pressure plasma jet (APPJ) to deposit silicon oxide as gate insulator of OTFTs at low temperature. We found carrier gas's flow rate would influence the deposition mechanism which lead to influence surface roughness and film quality. Leakage current density of our proposed silicon oxide was about 2.53E-8 A/cm(2) at 0.5 MV/cm. Our proposed OTFTs shows a low subthreshold swing of only 700 mV/dec., a low threshold voltage of -0.8 V, a low operation voltage of -2 V. The low-voltage OTFTs would reduce the power consummation of flexible display.en_US
dc.language.isoen_USen_US
dc.titleFlow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Transistor Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3481245en_US
dc.identifier.journalTHIN FILM TRANSISTORS 10 (TFT 10)en_US
dc.citation.volume33en_US
dc.citation.issue5en_US
dc.citation.spage255en_US
dc.citation.epage264en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315444100032-
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