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dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLo, Wen-Hungen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng-Tungen_US
dc.date.accessioned2014-12-08T15:29:53Z-
dc.date.available2014-12-08T15:29:53Z-
dc.date.issued2013-02-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4791676en_US
dc.identifier.urihttp://hdl.handle.net/11536/21432-
dc.description.abstractThis work finds a significant difference in degradation under hot carrier stress (HCS) due to additional hole injection in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. A comparison performed on degradation of input/output (I/O) and standard performance (SP) devices showed that performance degradation of the I/O device is worse than the SP device under HCS. For the SP device, both channel-electrons and hot holes can inject into gate dielectric, in which hole acts to diminish the stress field. However, I/O device shows only electron injection. The proposed model is confirmed by gate induced drain leakage current and simulation tool. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791676]en_US
dc.language.isoen_USen_US
dc.titleHole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4791676en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000315596700079-
dc.citation.woscount3-
Appears in Collections:Articles


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