標題: | Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behavior |
作者: | Wang, Yu-Sheng Chen, Kei-Wei Cheng, Min-Yuan Lee, Wen-Hsi Wang, Ying-Lang 材料科學與工程學系 光電學院 Department of Materials Science and Engineering College of Photonics |
關鍵字: | Semiconductors;Barriers;Chemical mechanical polishing |
公開日期: | 1-Feb-2013 |
摘要: | This study proposes that the corrosion resistance of copper film correlates well with underlying barrier's orientation. To test the hypothesis, we performed X-ray diffraction, conducted copper removal rate experiments after chemical mechanical polishing, and tested static potentiodynamic polarization. The results all show that copper deposited on strongly (002) oriented beta-Ta barrier layer demonstrated better chemical resistance against surface reaction with the slurry for strong copper (111) orientation. The findings were consistent with the result of the chronoamperometric test at 0.3 V in which the more passive film formed on the composite film with (002) beta-Ta underlying barrier. (C) 2012 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2012.06.017 http://hdl.handle.net/11536/21458 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2012.06.017 |
期刊: | THIN SOLID FILMS |
Volume: | 529 |
Issue: | |
起始頁: | 435 |
結束頁: | 438 |
Appears in Collections: | Articles |
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