標題: Design of ESD Protection for RF CMOS Power Amplifier with Inductor in Matching Network
作者: Tsai, Shiang-Yu
Lin, Chun-Yu
Chu, Li-Wei
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Due to the potential for mass production, CMOS technologies have been widely used to implement radio-frequency integrated circuits (RF ICs). Electrostatic discharge (ESD), which is one of the most important reliability issues in CMOS technologies, must be considered in RF ICs. In this work, an on-chip ESD protection design for RF power amplifier (PA) was presented. The ESD protection design consisted of an inductor in the matching network of PA. The PA with this ESD protection had been designed and fabricated in a 65-nm CMOS process. The ESD-protected PA can sustain over 4-kV human-body-mode (HBM) ESD stress, while the unprotected PA was degrated after 1-kv HBM ESD stress.
URI: http://hdl.handle.net/11536/21528
ISBN: 978-1-4577-1728-4
期刊: 2012 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS)
起始頁: 467
結束頁: 470
Appears in Collections:Conferences Paper