完整后设资料纪录
DC 栏位语言
dc.contributor.authorWU, CYen_US
dc.contributor.authorHSIEH, CCen_US
dc.date.accessioned2014-12-08T15:03:37Z-
dc.date.available2014-12-08T15:03:37Z-
dc.date.issued1995-01-01en_US
dc.identifier.issn0091-3286en_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.184101en_US
dc.identifier.urihttp://hdl.handle.net/11536/2156-
dc.description.abstractA new share-buffered direct-injection (SBDI) current readout circuit with high injection efficiency, low noise, high dynamic range, and good threshold control is proposed. The circuit is superior to the traditional direct-injection (DI) current readout circuit. Using the SBDI readout circuit, the same excellent performance of the buffered direct-injection (BDI) current readout can be achieved, but only half the chip area and power consumption are required. Thus the SBDI is more suitable for infrared (IR) readout applications, especially for 2-D focal plane arrays under strict power and area limitations. A dynamic discharge source follower (DDSF) output stage is also proposed and analyzed. It can improve the speed performance of the conventional source-follower output buffer and requires very little power dissipation. Both simulation and experimental results have verified the functions and the advantageous features of the proposed readout structure.en_US
dc.language.isoen_USen_US
dc.subjectIR FOCAL PLANE ARRAYSen_US
dc.subjectDETECTORSen_US
dc.subjectIR IMAGINGen_US
dc.subjectREADOUTSen_US
dc.subjectINTEGRATED CIRCUITSen_US
dc.subjectINJECTION EFFICIENCYen_US
dc.titleNEW DESIGN TECHNIQUES FOR A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CURRENT READOUT INTEGRATED-CIRCUIT FOR INFRARED DETECTOR ARRAYSen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.184101en_US
dc.identifier.journalOPTICAL ENGINEERINGen_US
dc.citation.volume34en_US
dc.citation.issue1en_US
dc.citation.spage160en_US
dc.citation.epage168en_US
dc.contributor.department电子工程学系及电子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995QB57800022-
dc.citation.woscount10-
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