完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Geng-Cing | en_US |
dc.contributor.author | Wang, Shao-Cheng | en_US |
dc.contributor.author | Lin, Yi-Wei | en_US |
dc.contributor.author | Tsai, Ming-Chien | en_US |
dc.contributor.author | Chuang, Ching-Te | en_US |
dc.contributor.author | Jou, Shyh-Jye | en_US |
dc.contributor.author | Lien, Nan-Chun | en_US |
dc.contributor.author | Shih, Wei-Chiang | en_US |
dc.contributor.author | Lee, Kuen-Di | en_US |
dc.contributor.author | Chu, Jyun-Kai | en_US |
dc.date.accessioned | 2014-12-08T15:30:06Z | - |
dc.date.available | 2014-12-08T15:30:06Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4673-0219-7 | en_US |
dc.identifier.issn | 0271-4302 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21578 | - |
dc.description.abstract | We present an all-digital bit transistor characterization scheme for CMOS 6T SRAM array. The scheme employs an on-chip operational amplifier feedback loop to measure the individual threshold voltage (VTH) of 6T SRAM bit cell transistors (holding PMOS, pull-down NMOS, and access NMOS) in SRAM cell array environment. The measured voltage is converted to frequency with dual VCO and counter based digital read-out to facilitate data extraction, processing, and statistical analysis. A 512Kb test chip is implemented in 55nm 1P10M Standard Performance (SP) CMOS technology. Monte Carlo simulations indicate that the accuracy of the VTH measurement scheme is about 2-7mV at TT corner across temperature range from 85 degrees C to -45 degrees C, and post-layout simulations show the resolution of the digital read-out scheme is < 0.2mV per bit. Measured VTH distributions agree well with Monte Carlo simulation results. | en_US |
dc.language.iso | en_US | en_US |
dc.title | An All-Digital Bit Transistor Characterization Scheme for CMOS 6T SRAM Array | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | en_US |
dc.citation.spage | 2485 | en_US |
dc.citation.epage | 2488 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000316903702171 | - |
顯示於類別: | 會議論文 |