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dc.contributor.authorHung, Chih-Tsangen_US
dc.contributor.authorHo, Tsong-Linen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:30:07Z-
dc.date.available2014-12-08T15:30:07Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-0828-2en_US
dc.identifier.issn2326-5442en_US
dc.identifier.urihttp://hdl.handle.net/11536/21589-
dc.language.isoen_USen_US
dc.title830nm Graded Index Double Barrier Separate Confinement Heterostructure Laser Diodes with Small Vertical Divergence and Temperature Insensitive Characteristicsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.citation.spage76en_US
dc.citation.epage77en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000316820100039-
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