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dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:30:20Z-
dc.date.available2014-12-08T15:30:20Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.6.041203en_US
dc.identifier.urihttp://hdl.handle.net/11536/21697-
dc.description.abstractA trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 10(6) cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory. (C) 2013 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEvaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuningen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.6.041203en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume6en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000317488600005-
dc.citation.woscount1-
Appears in Collections:Articles


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