Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning

doi:10.7567/APEX.6.041203

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DC 欄位	值	語言
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:30:20Z	-
dc.date.available	2014-12-08T15:30:20Z	-
dc.date.issued	2013-04-01	en_US
dc.identifier.issn	1882-0778	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/APEX.6.041203	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21697	-
dc.description.abstract	A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 10(6) cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory. (C) 2013 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/APEX.6.041203	en_US
dc.identifier.journal	APPLIED PHYSICS EXPRESS	en_US
dc.citation.volume	6	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000317488600005	-
dc.citation.woscount	1	-
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