Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution

標題:	Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution
作者:	Chou, K. I. Cheng, C. H. Zheng, Z. W. Liu, Ming Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Flexible electronics;GeOx;resistive random access memory (RRAM);TiOy
公開日期:	1-Apr-2013
摘要:	Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
URI:	http://dx.doi.org/10.1109/LED.2013.2243814 http://hdl.handle.net/11536/21713
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2243814
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	4
起始頁:	505
結束頁:	507
Appears in Collections:	Articles

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