標題: | Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope |
作者: | Liu, Tung-Yu Lo, Shen-Chuan Sheu, Jeng-Tzong 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Gate-all-around (GAA);nanowire (NW);single-crystal-like (SCL);thin film transistor (TFT) |
公開日期: | 1-四月-2013 |
摘要: | We investigate the characteristics of single-crystallike (SCL) poly-Si nanowire (SCL poly-Si NW) thin-film-transistors with gate-all-around (GAA) structures. The GAA SCL poly-Si NWs are prepared by a modified sidewall spacer process utilizing an amorphous silicon (alpha-Si) mesa structure. The combination of the high surface-to-volume ratio of the NW and a nominal gate length of 0.25 mu m lead to clear improvement in electrical performance, including a steep subthreshold swing (90 +/- 15 mV/dec), a virtual absence of drain-induced barrier lowering (21 +/- 13 mV/V), and a very high ON/OFF current ratio similar to 7 x 10(7) (V-D = 1 V, V-G = 3 V). |
URI: | http://dx.doi.org/10.1109/LED.2013.2247737 http://hdl.handle.net/11536/21716 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2247737 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 4 |
起始頁: | 523 |
結束頁: | 525 |
顯示於類別: | 期刊論文 |