標題: Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope
作者: Liu, Tung-Yu
Lo, Shen-Chuan
Sheu, Jeng-Tzong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Gate-all-around (GAA);nanowire (NW);single-crystal-like (SCL);thin film transistor (TFT)
公開日期: 1-四月-2013
摘要: We investigate the characteristics of single-crystallike (SCL) poly-Si nanowire (SCL poly-Si NW) thin-film-transistors with gate-all-around (GAA) structures. The GAA SCL poly-Si NWs are prepared by a modified sidewall spacer process utilizing an amorphous silicon (alpha-Si) mesa structure. The combination of the high surface-to-volume ratio of the NW and a nominal gate length of 0.25 mu m lead to clear improvement in electrical performance, including a steep subthreshold swing (90 +/- 15 mV/dec), a virtual absence of drain-induced barrier lowering (21 +/- 13 mV/V), and a very high ON/OFF current ratio similar to 7 x 10(7) (V-D = 1 V, V-G = 3 V).
URI: http://dx.doi.org/10.1109/LED.2013.2247737
http://hdl.handle.net/11536/21716
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2247737
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 4
起始頁: 523
結束頁: 525
顯示於類別:期刊論文


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