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dc.contributor.authorDai, Chih-Haoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorKuo, Yuan-Juien_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorLo, Wen-Hungen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorShih, Jou-Miaoen_US
dc.contributor.authorChung, Wan-Linen_US
dc.contributor.authorDai, Bai-Shanen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorXia, Guangruien_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng Tungen_US
dc.date.accessioned2014-12-08T15:30:23Z-
dc.date.available2014-12-08T15:30:23Z-
dc.date.issued2011-07-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3608241en_US
dc.identifier.urihttp://hdl.handle.net/11536/21737-
dc.description.abstractThis paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608241]en_US
dc.language.isoen_USen_US
dc.titleHot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3608241en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292639200033-
dc.citation.woscount17-
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