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dc.contributor.authorHsiao, Hsiang-Yaoen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:03:39Z-
dc.date.available2014-12-08T15:03:39Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-3619-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/2174-
dc.identifier.urihttp://dx.doi.org/10.1109/EMAP.2008.4784283en_US
dc.description.abstractIn this paper, the temperature distribution during electromigration in flip-chip SnAg3.5 solder bumps is directly examined using infrared microscopy. Two clear hot spots are observed in the bump. One is located at the region with peak current density, and the other one is at the bump edge under the current-feeding metallization on the chip side. Under a current stress of 1.06 x 10(4) A/cm(2), the temperature in the two hot spots are 161.7 degrees C and 167.8 degrees C, respectively, which surpass the average bump temperature of 150.5 degrees C. In addition, effect Of under-bump-metallization (UBM) thickness oil the hot spots is also examined. It indicates that the hot-spot temperature in the solder bump increases for the solder joints with a thinner UBM.en_US
dc.language.isoen_USen_US
dc.titleMeasurement of Temperature Distribution in SnAg3.5 Flip-Chip Solder Joints during Current Stressing Using Infrared Microscopyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/EMAP.2008.4784283en_US
dc.identifier.journal2008 EMAP CONFERENCE PROCEEDINGSen_US
dc.citation.spage281en_US
dc.citation.epage284en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264237400065-
Appears in Collections:Conferences Paper


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