Measurement of Temperature Distribution in SnAg3.5 Flip-Chip Solder Joints during Current Stressing Using Infrared Microscopy

doi:10.1109/EMAP.2008.4784283

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DC 欄位	值	語言
dc.contributor.author	Hsiao, Hsiang-Yao	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2014-12-08T15:03:39Z	-
dc.date.available	2014-12-08T15:03:39Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-3619-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2174	-
dc.identifier.uri	http://dx.doi.org/10.1109/EMAP.2008.4784283	en_US
dc.description.abstract	In this paper, the temperature distribution during electromigration in flip-chip SnAg3.5 solder bumps is directly examined using infrared microscopy. Two clear hot spots are observed in the bump. One is located at the region with peak current density, and the other one is at the bump edge under the current-feeding metallization on the chip side. Under a current stress of 1.06 x 10(4) A/cm(2), the temperature in the two hot spots are 161.7 degrees C and 167.8 degrees C, respectively, which surpass the average bump temperature of 150.5 degrees C. In addition, effect Of under-bump-metallization (UBM) thickness oil the hot spots is also examined. It indicates that the hot-spot temperature in the solder bump increases for the solder joints with a thinner UBM.	en_US
dc.language.iso	en_US	en_US
dc.title	Measurement of Temperature Distribution in SnAg3.5 Flip-Chip Solder Joints during Current Stressing Using Infrared Microscopy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/EMAP.2008.4784283	en_US
dc.identifier.journal	2008 EMAP CONFERENCE PROCEEDINGS	en_US
dc.citation.spage	281	en_US
dc.citation.epage	284	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000264237400065	-
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