標題: Effect of Oxygen Annealing on the Ultraviolet Photoresponse of p-NiO-Nanoflower/n-ZnO-Nanowire Heterostructures
作者: Yang, Po-Yu
Wang, Jyh-Liang
Tsai, Wei-Chih
Wang, Shui-Jinn
Lin, Jia-Chuan
Lee, I-Che
Chang, Chia-Tsung
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ultraviolet (UV) Photodetector;Hydrothermal Method;Nanoheterojunction (NHJ);Nanoflower (NF);Nanowire (NW)
公開日期: 1-Jul-2011
摘要: A transparent ultraviolet (UV) sensor using nanoheterojunctions (NHJs) composed of p-type NiO nanoflowers (NFs) and n-type ZnO nanowires (NWs) was prepared through a sequential low-temperature hydrothermal-growth process. The devices that were annealed in an oxygen (O(2)) ambient exhibited better rectification behavior (l(forward)/l(reverse) = 427), a lower forward threshold voltage (V(th) = 0.98 V), a lower leakage current (1.68 x 10(-5) A/cm(2)), and superior sensitivity (l(UV)/l(dark) = 57.8; l(visible)/l(dark) = 1.25) to UV light (lambda = 325 nm) than the unannealed devices. The remarkably improved device performances and optoelectronic characteristics of the annealed p-NiO-NF/n-ZnO-NW NHJs can be associated with their fewer structural defects, fewer interfacial defects, and better crystallinity. A stable and repeatable operation of dynamic photoresponse was also observed in the annealed devices. The excellent sensitivity and repeatable photoresponse to UV light of the hydrothermally grown p-NiO-NF/n-ZnO-NW NHJs annealed in a suitable O(2) ambient indicate that they can be applied to nano-integrated optoelectronic devices.
URI: http://dx.doi.org/10.1166/jnn.2011.4349
http://hdl.handle.net/11536/21803
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4349
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 11
Issue: 7
起始頁: 5737
結束頁: 5743
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