標題: QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
作者: CHANG, TC
CHANG, CY
JUNG, TG
CHEN, PA
TSAI, WC
WANG, PJ
CHEN, YF
PAN, SC
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-Dec-1994
摘要: Well-resolved band-edge luminescence is observed for Si0.86Ge0.14/Si strained-layer superlattices grown by an ultrahigh vacuum/chemical vapour deposition technique at 550 degrees C. High-resolution double-crystal X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM) were used to determine the strain and other parameters for these strained-layer superlattices. Quantum confinement is observed for a SiGe well as thin as 1.3 nm. The blue shift of the emission peaks with decreasing well width is found to be in good agreement with theoretical calculation.
URI: http://dx.doi.org/10.1007/BF00215576
http://hdl.handle.net/11536/2188
ISSN: 0957-4522
DOI: 10.1007/BF00215576
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 5
Issue: 6
起始頁: 370
結束頁: 374
Appears in Collections:Articles