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dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLou, Jyun-Haoen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.authorLiu, Mingen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:30:42Z-
dc.date.available2014-12-08T15:30:42Z-
dc.date.issued2013-04-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4802821en_US
dc.identifier.urihttp://hdl.handle.net/11536/21923-
dc.description.abstractIn this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleAtomic-level quantized reaction of HfOx memristoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4802821en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue17en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000318553000043-
dc.citation.woscount23-
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