標題: AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique
作者: Lo, Ming-Hua
Li, Zhen-Yu
Chen, Shih-Wei
Hong, Jhih-Cang
Lu, Ting-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 2008
摘要: We report the successful growth of high quality ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). From atomic force microscope measurement, the root-mean-square value of the surface morphology was only 0.35 nm, and no crack was found on the surface. The dislocation density was estimated to be as low as 2x10(8) cm(-2). X-ray and transmission electron microscope data show the grown MQW has shape interface with good periodicity. The sample has a deep UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 45 meV at 13K. The cathodoluminescence image show fairly uniform luminescence pattern at room temperature. In conclusion, the AlGaN/GaN MQW grown by ALD technique should be useful for providing high crystalline quality AlGaN/GaN-based MQW for fabrication of AlGaN/GaN-based UV light emitting devices such as light emitting diodes and lasers.
URI: http://hdl.handle.net/11536/219
ISBN: 978-1-60511-038-7
ISSN: 0272-9172
期刊: ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES
Volume: 1068
起始頁: 101
結束頁: 106
顯示於類別:會議論文