标题: | Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices |
作者: | Chen, Chien-Hung Li, Yiming Chen, Chieh-Yang Chen, Yu-Yu Hsu, Sheng-Chia Huang, Wen-Tsung Chu, Sheng-Yuan 资讯工程学系 Department of Computer Science |
关键字: | Mobility;FinFET;Interface roughness;Silicon germaniums;Device simulation;Orientations |
公开日期: | 1-九月-2013 |
摘要: | In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mee.2013.03.131 http://hdl.handle.net/11536/22108 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2013.03.131 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 109 |
Issue: | |
起始页: | 357 |
结束页: | 359 |
显示于类别: | Articles |
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