标题: Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
作者: Chen, Chien-Hung
Li, Yiming
Chen, Chieh-Yang
Chen, Yu-Yu
Hsu, Sheng-Chia
Huang, Wen-Tsung
Chu, Sheng-Yuan
资讯工程学系
Department of Computer Science
关键字: Mobility;FinFET;Interface roughness;Silicon germaniums;Device simulation;Orientations
公开日期: 1-九月-2013
摘要: In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2013.03.131
http://hdl.handle.net/11536/22108
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.03.131
期刊: MICROELECTRONIC ENGINEERING
Volume: 109
Issue: 
起始页: 357
结束页: 359
显示于类别:Articles


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