標題: A Novel Coaxial-Structured Amorphous-Silicon p-i-n Solar Cell With Al-Doped ZnO Nanowires
作者: Li, Hung-Hsien
Yang, Po-Yu
Chiou, Si-Ming
Liu, Han-Wen
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al-doped-ZnO (AZO) nanowires;amorphous silicon (a-Si);coaxial structure;solar cell
公開日期: 1-Jul-2011
摘要: A novel coaxial-structured amorphous-silicon (a-Si) p-i-n solar cell with 1-mu m-long low-temperature hydrothermally synthesized Al-doped-ZnO (AZO) nanowires was demonstrated for the first time. The conversion efficiency. increased from 3.92% to 4.27% when the intrinsic a-Si thickness was increased from 25 to 150 nm and then decreased to 3.66% when the intrinsic layer thickness was further increased to 250 nm. It was attributed to an excessively thick intrinsic a-Si layer that would decrease the internal electrical field and interfere with charge separation. With the optimum intrinsic a-Si thickness of 150 nm, the conversion efficiency increased from 4.27% to 4.73% when the AZO wire length was increased from 1 to 2 mu m. Moreover, the proposed coaxial-structured solar cell exhibited a nearly 46% efficiency enhancement over a conventional a-Si thin-film solar cell.
URI: http://dx.doi.org/10.1109/LED.2011.2146752
http://hdl.handle.net/11536/22154
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2146752
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 7
起始頁: 928
結束頁: 930
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