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dc.contributor.authorHsieh, Wei-Chihen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2014-12-08T15:31:08Z-
dc.date.available2014-12-08T15:31:08Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2010.2048587en_US
dc.identifier.urihttp://hdl.handle.net/11536/22176-
dc.description.abstractAn adaptive power control (APC) system on power-gated circuitries is proposed. The core technique is a switching state determination mechanism as an alternative of critical path replicas. It is intrinsically tolerant of process, voltage, and temperature (PVT) variations because it directly monitors the behavior of VDDV node. The APC system includes a multi-mode power gating network, a voltage sensor, a variable threshold comparator, a slack detection block, and a bank of bidirectional shift registers. By dynamically configuring the size of power gating devices, an average of 56.5% unused slack resulted from worst case margins or input pattern change can be further utilized. A 32-64 bit multiply-accumulate (MAC) unit is fabricated using UMC 90-nm standard process CMOS technology as a test vehicle. The measurement results of test chips exhibit an average of 12.39% net power reduction. A 7.96 x leakage reduction is reported by power gating the MAC unit. For the 32-bit multiplier of MAC, the area and power overhead of proposed APC system are 5% and 1.08%, respectively. Most of the overhead is contributed by power gating devices and their control signal buffers.en_US
dc.language.isoen_USen_US
dc.subjectPower controlen_US
dc.subjectpower gatingen_US
dc.subjectswitching state determination mechanismen_US
dc.titleAdaptive Power Control Technique on Power-Gated Circuitriesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2010.2048587en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume19en_US
dc.citation.issue7en_US
dc.citation.spage1167en_US
dc.citation.epage1180en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292098600005-
dc.citation.woscount2-
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