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dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorTsai, Tsung-Lingen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:31:10Z-
dc.date.available2014-12-08T15:31:10Z-
dc.date.issued2013-07-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4816053en_US
dc.identifier.urihttp://hdl.handle.net/11536/22194-
dc.description.abstractTransition of resistive switching (RS) behavior from bipolar to unipolar is observed in Pt/ZrO2/HfO2/TiN device. Due to the lower oxygen vacancy concentration of the HfO2 layer, formation/rupture of the conducting filament is confined in the HfO2 layer. To fulfill one diode and one resistor (1D1R) structure, the electrical relation between the RS device and diode is investigated. A Pt/InZnO/CoO/Pt/TiN oxide diode is fabricated to provide enough forward current and large forward/reverse current ratio to achieve unipolar RS behavior. The 1D-1R structure with Pt/ZrO2/HfO2/TiN resistive random access memory shows robust retention and nondestructive readout property at 85 degrees C. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleUnipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4816053en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000322146300073-
dc.citation.woscount5-
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