Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

doi:10.1063/1.4816053

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DC 欄位	值	語言
dc.contributor.author	Lee, Dai-Ying	en_US
dc.contributor.author	Tsai, Tsung-Ling	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2014-12-08T15:31:10Z	-
dc.date.available	2014-12-08T15:31:10Z	-
dc.date.issued	2013-07-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4816053	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22194	-
dc.description.abstract	Transition of resistive switching (RS) behavior from bipolar to unipolar is observed in Pt/ZrO2/HfO2/TiN device. Due to the lower oxygen vacancy concentration of the HfO2 layer, formation/rupture of the conducting filament is confined in the HfO2 layer. To fulfill one diode and one resistor (1D1R) structure, the electrical relation between the RS device and diode is investigated. A Pt/InZnO/CoO/Pt/TiN oxide diode is fabricated to provide enough forward current and large forward/reverse current ratio to achieve unipolar RS behavior. The 1D-1R structure with Pt/ZrO2/HfO2/TiN resistive random access memory shows robust retention and nondestructive readout property at 85 degrees C. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4816053	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	103	en_US
dc.citation.issue	3	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000322146300073	-
dc.citation.woscount	5	-
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