標題: PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
作者: CHANG, EY
LIN, KC
WU, JW
CHEN, TH
CHEN, JS
WANG, SP
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
關鍵字: GAAS;MESFET;ECR-CVD
公開日期: 1-Dec-1994
摘要: Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.
URI: http://hdl.handle.net/11536/2220
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 33
Issue: 12A
起始頁: L1659
結束頁: L1661
Appears in Collections:Articles