標題: | Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD |
作者: | Chang, KM Cheng, CC Lang, CC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | GaN;silicon nitride;ECR;gate dielectric;MISFET |
公開日期: | 1-九月-2002 |
摘要: | Silicon nitride (SiN) film was deposited at 300 degreesC as the insulating layer of a GaN-based metal-insulator-semiconductor (MIS) diode by using electron cyclotron resonance chemical vapor deposition (ECR-CVD) with silane-to nitrogen (SiH4/N-2) flow ratio of 5/45. The deposited film had the refractive index of 1.9-2.0 and the relative dielectric constant of 6. Capacitance-voltage (C-V) characteristics were measured at I MHz and interface state densities were obtained by Terman's method. The negative fixed charge density of the SiN film was 1.1 x 10(11) cm(-2) and its breakdown field was greater than 5.7 MV/cm even at 350 degreesC. The value of the interface state density was less than 4 x 10(11) cm(-2) around the mid-gap and its minimum was 5 x 10(10) cm(-2) eV(-1) at 0.6 eV below the conduction band edge. From these results, the SiN film deposited by ECR-CVD is a promising gate dielectric for high temperature GaN-MISFET application. (C) 2002 Elsevier Science Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0038-1101(02)00085-0 http://hdl.handle.net/11536/28530 |
ISSN: | 0038-1101 |
DOI: | 10.1016/S0038-1101(02)00085-0 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 46 |
Issue: | 9 |
起始頁: | 1399 |
結束頁: | 1403 |
顯示於類別: | 期刊論文 |