Full metadata record
DC FieldValueLanguage
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorDeng, Dong-Meien_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLi, Jin-Chaien_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorShu, Gia-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLau, Kei-Mayen_US
dc.date.accessioned2014-12-08T15:31:24Z-
dc.date.available2014-12-08T15:31:24Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2011.2114640en_US
dc.identifier.urihttp://hdl.handle.net/11536/22319-
dc.description.abstractWe investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on micro-and nano-scale patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nano-scale epitaxial lateral overgrowth. The plan-view and cross-section cathodo luminescence mappings show less defective and more homogeneous active quantum-well region growth on nano-porous substrates. From temperature-dependent photoluminescence (PL) and low temperature time-resolved PL measurement, NPLEDs have better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibit smaller electroluminescence peak wavelength blue shift, lower reverse leakage current and decrease in efficiency droop when compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.en_US
dc.language.isoen_USen_US
dc.subjectLight emitting diodesen_US
dc.subjectmetal-organic chemical vapor depositionen_US
dc.subjectnano-scale epitaxial lateral overgrowthen_US
dc.subjectsilicon substrateen_US
dc.titleOptical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2011.2114640en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume47en_US
dc.citation.issue7en_US
dc.citation.spage899en_US
dc.citation.epage906en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290992800002-
dc.citation.woscount9-
Appears in Collections:Articles


Files in This Item:

  1. 000290992800002.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.