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dc.contributor.authorHuang, Jen-Weien_US
dc.contributor.authorZhang, Ruien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorLou, J. C.en_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorChen, Hsin-Luen_US
dc.contributor.authorPan, Yin-Chihen_US
dc.contributor.authorHuang, Xuanen_US
dc.contributor.authorZhang, Fengyanen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:31:32Z-
dc.date.available2014-12-08T15:31:32Z-
dc.date.issued2013-05-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4807577en_US
dc.identifier.urihttp://hdl.handle.net/11536/22359-
dc.description.abstractThis letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low permittivity structure, we obtained the excellent device characteristics such as uniform distribution of switching voltage and more stable resistance switching properties of RRAM. The current conduction mechanism of low resistance state in the HfO2/BN device was transferred to space-charge-limited current conduction from Ohmic conduction owing to space electric effect concentrated by the high/low permittivity bilayer structures. The electric field in the bilayer can be verified by COMSOL simulation software. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleThe effect of high/low permittivity in bilayer HfO2/BN resistance random access memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4807577en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue20en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000320619300093-
dc.citation.woscount4-
Appears in Collections:Articles


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