完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Yao-Feng | en_US |
dc.contributor.author | Tsai, Yu-Ting | en_US |
dc.contributor.author | Syu, Yong-En | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:31:36Z | - |
dc.date.available | 2014-12-08T15:31:36Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22406 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.020203jss | en_US |
dc.description.abstract | The electric faucet concept was realized and demonstrated by embedding cobalt nanocrystals in a TiN/SiO2/FeOx/FePt structure. The thermal annealing induced cobalt nanocrystals in silicon oxide would shrink both the operation voltage and variation as well as improves the electric faucet stability. The thickness effect and area size effect would be discussed, which indicated the optimized design and possible resistive switching mechanism for the FeOx-based memristor. The improvement of resistive switching stabilities and switching power characteristics show that the embedded nanocrystals in the insulating layer would localize the electric faucet formation and rupture at interface region. Importantly, a proposed mathematical model to describe the compliance current effect shows that the electric faucet was grown in two dimensions. These electrical results not only provide a possible physical picture to image the dynamic characteristics of the electric faucet's growth, but also introduce a possible mathematical method to quantify the electric faucet properties. (C) 2012 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.020203jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 1 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | Q57 | en_US |
dc.citation.epage | Q61 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000319446200018 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |