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dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorTsai, Yu-Tingen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.date.accessioned2014-12-08T15:31:36Z-
dc.date.available2014-12-08T15:31:36Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22406-
dc.identifier.urihttp://dx.doi.org/10.1149/2.020203jssen_US
dc.description.abstractThe electric faucet concept was realized and demonstrated by embedding cobalt nanocrystals in a TiN/SiO2/FeOx/FePt structure. The thermal annealing induced cobalt nanocrystals in silicon oxide would shrink both the operation voltage and variation as well as improves the electric faucet stability. The thickness effect and area size effect would be discussed, which indicated the optimized design and possible resistive switching mechanism for the FeOx-based memristor. The improvement of resistive switching stabilities and switching power characteristics show that the embedded nanocrystals in the insulating layer would localize the electric faucet formation and rupture at interface region. Importantly, a proposed mathematical model to describe the compliance current effect shows that the electric faucet was grown in two dimensions. These electrical results not only provide a possible physical picture to image the dynamic characteristics of the electric faucet's growth, but also introduce a possible mathematical method to quantify the electric faucet properties. (C) 2012 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleStudy of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristoren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.020203jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume1en_US
dc.citation.issue3en_US
dc.citation.spageQ57en_US
dc.citation.epageQ61en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000319446200018-
dc.citation.woscount1-
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