標題: | Metal nanocrystals as charge storage nodes for nonvolatile memory devices |
作者: | Yeh, P. H. Chen, L. J. Liu, P. T. Wang, D. Y. Chang, T. C. 光電工程學系 Department of Photonics |
關鍵字: | Ni nanocrystals;NiSi2 nanocrystals;CoSi2 nanocrystals;metal nanocrystals;nonvolatile memory |
公開日期: | 10-二月-2007 |
摘要: | The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.electacta.2006.09.006 http://hdl.handle.net/11536/5179 |
ISSN: | 0013-4686 |
DOI: | 10.1016/j.electacta.2006.09.006 |
期刊: | ELECTROCHIMICA ACTA |
Volume: | 52 |
Issue: | 8 |
起始頁: | 2920 |
結束頁: | 2926 |
顯示於類別: | 會議論文 |