標題: | Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors |
作者: | Chen, Yu-Chun Chang, Ting-Chang Li, Hung-Wei Chung, Wan-Fang Hsieh, Tien-Yu Chen, Yi-Hsien Tsai, Wu-Wei Chiang, Wen-Jen Yan, Jing-Yi 光電工程學系 Department of Photonics |
公開日期: | 2013 |
摘要: | This study examines the dependence of light-accelerated instability on bias and environment in amorphous indium-gallium-zinc-oxide thin film transistors. When device is in vacuum ambient, the threshold voltage of device after negative gate bias illumination stress (NBIS) showed bias-dependent electrical degradation behavior. However, experimental results show the degradation of electrical characteristic in a-IGZO devices does not only rely on the charge trapping mechanism for NBIS. During NBIS in oxygen, moisture-simulated and atmosphere ambient, the negative shift in electrical characteristic is suppressed when compared to that in vacuum. This implies that the adsorbent gas species in the surrounding environment dominates the electrical characteristic degradation of devices during NBIS, which leading the change of dominant mechanism from photon-created carrier trapping to adsorbed/desorbed gas phenomenon. (C) 2013 The Electrochemical Society. All rights reserved. |
URI: | http://hdl.handle.net/11536/22460 http://dx.doi.org/10.1149/2.028304jss |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.028304jss |
期刊: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Volume: | 2 |
Issue: | 4 |
起始頁: | Q74 |
結束頁: | Q76 |
Appears in Collections: | Articles |
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