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dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorKuo, Chin-Chien_US
dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorLin, Yuan-Tingen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorTu, Li-Weien_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:31:45Z-
dc.date.available2014-12-08T15:31:45Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22462-
dc.identifier.urihttp://dx.doi.org/10.1149/2.022303jssen_US
dc.language.isoen_USen_US
dc.titleGrowth and Characteristics of a-Plane GaN on ZnO Heterostructureen_US
dc.typeCorrectionen_US
dc.identifier.doi10.1149/2.022303jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume2en_US
dc.citation.issue3en_US
dc.citation.spageX1en_US
dc.citation.epageX1en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000319455600026-
dc.citation.woscount0-
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