Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

標題:	Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
作者:	Chien, K. F. Hsu, W. L. Tzou, A. J. . Lin, Y. C. Chou, W. C. Lee, L. Chia, C. H. Yang, C. S. 電子物理學系 Department of Electrophysics
關鍵字:	Molecular beam epitaxy;Oxides;Zinc compounds;Semiconducting II-VI materials
公開日期:	1-Sep-2013
摘要:	` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2012.12.151 http://hdl.handle.net/11536/22473
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2012.12.151
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	378
Issue:
起始頁:	208
結束頁:	211
Appears in Collections:	Conferences Paper

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