Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer

doi:10.7567/JJAP.52.08JK05

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Fu, Yi-Keng	en_US
dc.contributor.author	Lu, Yu-Hsuan	en_US
dc.contributor.author	Xuan, Rong	en_US
dc.contributor.author	Chen, Jenn-Fang	en_US
dc.contributor.author	Su, Yan-Kuin	en_US
dc.date.accessioned	2014-12-08T15:31:58Z	-
dc.date.available	2014-12-08T15:31:58Z	-
dc.date.issued	2013-08-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.52.08JK05	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22576	-
dc.description.abstract	The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED. (C) 2013 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.52.08JK05	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	52	en_US
dc.citation.issue	8	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000323883100133	-
dc.citation.woscount	0	-
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