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dc.contributor.authorSU, HPen_US
dc.contributor.authorLIU, HWen_US
dc.contributor.authorHONG, Gen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:03:43Z-
dc.date.available2014-12-08T15:03:43Z-
dc.date.issued1994-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.334660en_US
dc.identifier.urihttp://hdl.handle.net/11536/2260-
dc.description.abstractHigh-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850-degrees-C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO'S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.en_US
dc.language.isoen_USen_US
dc.titleSUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.334660en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume15en_US
dc.citation.issue11en_US
dc.citation.spage440en_US
dc.citation.epage442en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PT32600002-
dc.citation.woscount8-
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