THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY

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DC 欄位	值	語言
dc.contributor.author	YEH, CF	en_US
dc.contributor.author	CHEN, CL	en_US
dc.contributor.author	LIN, GH	en_US
dc.date.accessioned	2014-12-08T15:03:43Z	-
dc.date.available	2014-12-08T15:03:43Z	-
dc.date.issued	1994-11-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2262	-
dc.description.abstract	Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with H2O addition only at 35-degrees-C. The deposition rate could be controlled by varying the quantity of H2O added. The LPD-oxide was lightly oxygen-deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed.	en_US
dc.language.iso	en_US	en_US
dc.title	THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	141	en_US
dc.citation.issue	11	en_US
dc.citation.spage	3177	en_US
dc.citation.epage	3181	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994PQ52400044	-
dc.citation.woscount	47	-
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