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dc.contributor.authorYEH, CFen_US
dc.contributor.authorCHEN, CLen_US
dc.contributor.authorLIN, GHen_US
dc.date.accessioned2014-12-08T15:03:43Z-
dc.date.available2014-12-08T15:03:43Z-
dc.date.issued1994-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/2262-
dc.description.abstractSilicon oxide formation was studied by a novel liquid phase deposition (LPD) method with H2O addition only at 35-degrees-C. The deposition rate could be controlled by varying the quantity of H2O added. The LPD-oxide was lightly oxygen-deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed.en_US
dc.language.isoen_USen_US
dc.titleTHE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLYen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume141en_US
dc.citation.issue11en_US
dc.citation.spage3177en_US
dc.citation.epage3181en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PQ52400044-
dc.citation.woscount47-
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