LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR

標題:	LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR
作者:	YEH, CF LIN, SS HONG, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-七月-1995
摘要:	Device performances of MOSFET's with SiO2-xFx gate oxides prepared by an extremely low-temperature (15 degrees C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (mu(eff)) of 525 cm(2)V . s, and subthreshold suing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFET's. This demonstrates that LPD SiO2-xFx can be a suitable candidate for future gate insulators in low-temperature processed MOSFET's.
URI:	http://dx.doi.org/10.1109/55.388719 http://hdl.handle.net/11536/1833
ISSN:	0741-3106
DOI:	10.1109/55.388719
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	16
Issue:	7
起始頁:	316
結束頁:	318
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。