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dc.contributor.authorCheng, Ya-Chien_US
dc.contributor.authorWu, Yung-Chunen_US
dc.contributor.authorChen, Hung-Binen_US
dc.contributor.authorHan, Ming-Hungen_US
dc.contributor.authorLu, Nan-Hengen_US
dc.contributor.authorSu, Jun-Jien_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:32:25Z-
dc.date.available2014-12-08T15:32:25Z-
dc.date.issued2013-09-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4821856en_US
dc.identifier.urihttp://hdl.handle.net/11536/22752-
dc.description.abstractThe breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleHigh voltage characteristics of junctionless poly-silicon thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4821856en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000324826000085-
dc.citation.woscount1-
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