標題: | Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application |
作者: | Binh Tinh Tran Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | InAlN;Si;photodiode;lattice-matched |
公開日期: | 1-九月-2013 |
摘要: | In this paper, we report on the growth of high quality In (x) Al1-x N/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 A mu A, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate. |
URI: | http://dx.doi.org/10.1007/s13391-013-2254-8 http://hdl.handle.net/11536/22779 |
ISSN: | 1738-8090 |
DOI: | 10.1007/s13391-013-2254-8 |
期刊: | ELECTRONIC MATERIALS LETTERS |
Volume: | 9 |
Issue: | 5 |
起始頁: | 705 |
結束頁: | 708 |
顯示於類別: | 期刊論文 |